CM200EXS-24S Datasheet, PDF (3/9 Pages) Powerex Power Semiconductors – Chopper IGBT NX-Series Module 200 Amperes/1200 Volts

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CM200EXS-24S
Chopper IGBT NX-Series Module
200 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Emitter Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate-Emitter Leakage Current
I_GES
±V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
V_GE(th)
V_CE(sat)
(Terminal)
V_CE(sat)
(Chip)
I_C = 20mA, V_CE = 10V
I_C = 200A, V_GE = 15V, T_j = 25°C^*6
I_C = 200A, V_GE = 15V, T_j = 125°C^*6
I_C = 200A, V_GE = 15V, T_j = 150°C^*6
I_C = 200A, V_GE = 15V, T_j = 25°C^*6
I_C = 200A, V_GE = 15V, T_j = 125°C^*6
I_C = 200A, V_GE = 15V, T_j = 150°C^*6
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Gate Charge
Q_G
V_CC = 600V, I_C = 200A, V_GE = 15V
Turn-on Delay Time
Rise Time
t_d(on)
t_r
V_CC = 600V, I_C = 200A, V_GE = ±15V,
Turn-off Delay Time
t_d(off)
R_G = 0Ω, Inductive Load
Fall Time
t_f
Repetitive Peak Reverse Current
Forward Voltage Drop
Clamp Di Part
Forward Voltage Drop
Clamp Di Part
Reverse Recovery Time
Reverse Recovery Charge
I_RRM
V_F^*1
(Terminal)
V_F^*1
(Chip)
t_rr^*1
Q_rr^*1
V_R = V_RRM
I_F = 200A, V_GE = 0V, T_j = 25°C^*6
I_F = 200A, V_GE = 0V, T_j = 125°C^*6
I_F = 200A, V_GE = 0V, T_j = 150°C^*6
I_F = 200A, V_GE = 0V, T_j = 25°C^*6
I_F = 200A, V_GE = 0V, T_j = 125°C^*6
I_F = 200A, V_GE = 0V, T_j = 150°C^*6
V_CC = 600V, I_F = 200A, V_GE = ±15V
R_G = 0Ω, Inductive Load, Clamp Di Part
Turn-on Switching Energy per Pulse
E_on
V_CC = 600V, I_C = I_F = 200A,
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
E_off
E_rr^*1
V_GE = ±15V, R_G = 0Ω, T_j = 150°C,
Inductive Load, Clamp Di Part
Internal Lead Resistance
R_{CC' + EE'}
Main Terminals-Chip,
Per Switch,T_C = 25°C^*2
Internal Gate Resistance
r_g
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
51.1
Th
40.4
Tr
Min.
Typ.
—
—
—
—
5.4
6
—
1.80
—
2.00
—
2.05
—
1.70
—
1.90
—
1.95
—
—
—
—
—
—
—
466
—
—
—
—
—
—
—
—
—
—
—
1.80
—
1.80
—
1.80
—
1.70
—
1.70
—
1.70
—
—
—
10.7
—
30.7
—
21.5
—
14.2
—
—
—
9.8
18.9
Di
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor
Max.
1
0.5
6.6
2.25
—
—
2.15
—
—
20
4.0
0.33
—
800
200
600
300
1
2.25
—
—
2.15
—
—
300
—
—
—
—
—
—
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
mA
Volts
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
07/12 Rev. 0
3