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| CM200DU-24NFH Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DU-24NFH
Dual IGBTMOD⢠NFH-Series Module
200 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
102
tf
td(off)
td(on)
101
100
101
tr
VCC = 600V
VGE = ±15V
RG = 1.6â¦
Tj = 125°C
Inductive Load
102
103
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
102 VCC = 600V
VGE = ±15V
RG = 1.6â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
101
ESW(off)
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
Irr
trr
102
102
101
101
102
VCC = 600V
VGE = ±15V
RG = 1.6â¦
Tj = 25°C
Inductive Load 101
102
103
EMITTER CURRENT, IE, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
ESW(on)
ESW(off)
GATE CHARGE VS. VGE
20
IC = 200A
16
VCC = 400V
12
VCC = 600V
8
4
0
0 200 400 600 800 1000 1200 1400
GATE CHARGE, QG, (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
102
101
100
100
VCC = 600V
VGE = ±15V
IC = 200A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
GATE RESISTANCE, RG, (â¦)
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
101
100
101
Err
VCC = 600V
VGE = ±15V
RG = 1.6â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
102
EMITTER CURRENT, IE, (AMPERES)
103
Err
101
100
100
VCC = 600V
VGE = ±15V
IE = 200A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
GATE RESISTANCE, RG, (â¦)
102
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.15°C/W
(IGBT)
Rth(j-c) =
0.24°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
4
7/11 Rev. 1
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