CM200DU-24NFH Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM200DU-24NFH
Dual IGBTMOD™ NFH-Series Module
200 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Symbol
Test Conditions
Min.
Rth(j-c)Q
Per IGBT 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)'Q
Per IGBT 1/2 Module,
—
TC Reference Point Under Chips
Rth(j-c)'D
Per FWDi 1/2 Module,
—
TC Reference Point Under Chips
Rth(c-f) Per 1/2 Module, Thermal Grease Applied —
RG
1.6
Typ.
Max. Units
—
0.15 °C/W
—
0.24 °C/W
—
0.095 °C/W
—
0.14 °C/W
0.04
—
°C/W
—
16
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
400
T_j = 25°C
V_GE = 20V
14
15
13
300
12
200
11
10
100
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 400A
6
I_C = 200A
4
I_C = 80A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
V_GE = 10V
T_j = 25°C
300
T_j = 125°C
200
100
0
0
10³
5
10
15
20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T_j = 25°C
T_j = 125°C
10²
10¹
01
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
8
V_GE = 15V
T_j = 25°C
7
T_j = 125°C
6
5
4
3
2
1
0
0
100
200
300
400
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
7/11 Rev. 1
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