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| CM200DU-12NFH Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DU-12NFH
Dual IGBTMOD⢠NFH-Series Module
200 Amperes/600 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
Irr
trr
102
102
101
101
VCC = 300V
VGE = 15V
RG = 6.3â¦
Tj = 25C
Inductive Load 101
102
103
EMITTER CURRENT, IE, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
VCC = 300V
VGE = 15V
IC = 200A
Tj = 125C
Inductive Load
C Snubber at Bus
101
100
100
ESW(on)
ESW(off)
101
GATE RESISTANCE, RG, (â¦)
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
GATE CHARGE VS. VGE
20
IC = 200A
16
VCC = 200V
12
VCC = 300V
8
4
0
0 300 600 900 1200 1500 1800
GATE CHARGE, QG, (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
101
Err
100
10-1
101
VCC = 300V
VGE = 15V
RG = 6.3â¦
Tj = 125C
Inductive Load
C Snubber at Bus
102
EMITTER CURRENT, IE, (AMPERES)
103
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
101
100
10-1
101
VCC = 300V
VGE = 15V
RG = 6.3â¦
Tj = 125C
Inductive Load
C Snubber at Bus
ESW(on)
ESW(off)
102
103
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
101
Err
100
10-1
100
VCC = 300V
VGE = 15V
IE = 200A
Tj = 125C
Inductive Load
C Snubber at Bus
101
GATE RESISTANCE, RG, (â¦)
102
10-1
10-2
10-3
Single Pulse
TC = 25C
Per Unit Base =
Rth(j-c) =
0.21C/W
(IGBT)
Rth(j-c) =
0.35C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
4
Rev. 11/09
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