CM200DU-12NFH Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module
200 Amperes/600 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Symbol
Test Conditions
Min.
Rth(j-c)Q
Per IGBT 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)'Q
Per IGBT 1/2 Module,
—
TC Reference Point Under Chips
Rth(c-f) Per 1/2 Module, Thermal Grease Applied —
RG
3.1
Typ.
—
—
—
0.07
—
Max.
0.21
Units
°C/W
0.35 °C/W
0.15 °C/W
—
°C/W
31
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
400
11
9.5 ¹⁰
V_GE = 20V
9
15
8.5
300
13
8
200
7.5
100
7
T_j = 25^oC
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
T_j = 125°C
10²
10¹
0 0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
V_GE = 15V
2.5
T_j = 25°C
T_j = 125°C
2.0
1.5
1.0
0.5
0
0
100
200
300 400
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
T_j = 25°C
4
3
I_C = 400A
2
I_C = 200A
I_C = 80A
1
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_d(on)
10²
t_f
t_r
10¹
10¹
V_CC = 300V
V_GE = ±15V
R_G = 6.3Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
Rev. 11/09
3