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CM150RX-12A Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150RX-12A
Six IGBTMOD⢠+ Brake NX-Series Module
150 Amperes/600 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Brake Sector
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Repetitive Reverse Current*
Forward Voltage Drop *
ICES
VCE = VCES, VGE = 0V
â
â
1.0
mA
VGE(th)
IC = 7.5mA
5
6
7
Volts
IGES
VGE = VGES, VCE = 0V
â
â
0.5
µA
VCE(sat)
IC = 75A, VGE = 15V, Tj = 25°C
â
1.7
2.1
Volts
IC = 75A, VGE = 15V, Tj = 125°C
â
1.9
â
Volts
IC = 75A, VGE = 15V, Chip
â
1.6
â
Volts
Cies
â
â
9.3
nF
Coes
VCE = 10V, VGE = 0V
â
â
1.0
nF
Cres
â
â
0.3
nF
QG
VCC = 300V, IC = 75A, VGE = 15V
â
200
â
nC
IRRM
VR = VRRM
â
â
1.0
mA
VF
IF = 75A, Tj = 25°C
â
2.0
2.8
Volts
IF = 75A, Tj = 125°C
â
1.95
â
Volts
IF = 75A, Chip
â
1.9
â
Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(j-f)
RGint
RG
Test Conditions
Per IGBT
Per FWDi
Thermal Grease Applied
TC = 25°C
Min.
Typ.
Max. Units
â
â
0.44 °C/W
â
â
0.85 °C/W
â
0.015
â
°C/W
â
0
â
Ω
8
â
83
Ω
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Zero Power Resistance
R
TC = 25°C
4.85
Deviation of Resistance
âR/R
TC = 100°C, R100 = 493Ω
â7.3
B Constant
B(25/50)
B = (InR1 â InR2) / (1/T1 â 1/T2)***
â
Power Dissipation
P25
TC = 25°C
â
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**TC, Tf measured point is just under the chips.
***R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = t(°C) + 273.15
Typ.
5.00
â
3375
â
Max.
5.15
+7.8
â
10
Units
kΩ
%
K
mW
4
Rev. 11/08
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