CM150RX-12A Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM150RX-12A
Six IGBTMOD™ + Brake NX-Series Module
150 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M5 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T_j
T_stg
—
—
—
V_ISO
CM150RX-12A
-40 to 150
-40 to 125
31
31
330
2500
Inverter Sector
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T_C = 63°C)*
Peak Collector Current**
Emitter Current (T_C = 25°C, T_j < 150°C)*
Peak Emitter Current (T_j < 150°C)**
Maximum Collector Dissipation (T_C = 25°C, T_j < 150°C)*
V_CES
600
V_GES
±20
I_C
150
I_CM
300
I_E***
150
I_EM***
300
P_C
520
Brake Sector
Collector-Emitter Voltage (G-E Short)
V_CES
600
Gate-Emitter Voltage (C-E Short)
V_GES
±20
Collector Current (T_C = 70°C)*
I_C
75
Peak Collector Current**
I_CM
150
Maximum Collector Dissipation (T_C = 25°C, T_j < 150°C)*
P_C
280
Repetitive Peak Reverse Voltage (Clamp Diode Part)
V_RRM***
600
Forward Current (T_C = 25°C)*
I_F***
75
Forward Current (Clamp Diode Part)**
I_FM***
150
*T_C, T_f measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
in-lb
in-lb
Grams
Volts
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Volts
Volts
Amperes
Amperes
Watts
Volts
Amperes
Amperes
2
Rev. 11/08