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| CM150E3U-24H Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150E3U-24H
Chopper IGBTMOD⢠U-Series Module
150 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
tf
td(off)
102
td(on)
tr
101
100
101
VCC = 600V
VGE = ±15V
RG = 2.1â¦
Tj = 125°C
102
103
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100 Per Unit Base = Rth(j-c) = 0.14°C/W
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
di/dt = -300A/µsec
Tj = 25°C
102
trr
102
GATE CHARGE, VGE
20
IC = 150A
VCC = 400V
15
VCC = 600V
10
101
101
Irr
102
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10110-3
10-2
10-1
100
Single Pulse
TC = 25°C
100 Per Unit Base = Rth(j-c) = 0.24°C/W
101
103
101
5
0
0
200 400
600
800
GATE CHARGE, QG, (nC)
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
10-3
10-5
TIME, (s)
10-4
10-3
10-3
142
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