CM150E3U-24H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150E3U-24H
Chopper IGBTMOD™ U-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
CM150E3U-24H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C, T_j ≤ 150°C)
Mounting Torque, M6 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
-40 to 150
-40 to 125
1200
±20
150
300*
150
300*
890
40
Mounting Torque, M6 Mounting
–
40
Weight
–
400
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
2500
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Voltage
I_CES
I_GES
V_CE = V_CES, V_GE = 0V
–
V_GE = V_GES, V_CE = 0V
–
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
V_GE(th)
I_C = 15mA, V_CE = 10V
4.5
V_CE(sat)
I_C = 150A, V_GE = 15V, T_j = 25°C
–
I_C = 150A, V_GE = 15V, T_j = 125°C
–
Q_G
V_CC = 600V, I_C = 150A, V_GE = 15V
–
V_EC
I_E = 150A, V_GE = 0V
–
V_FM
I_F = 150A, Clamp Diode Part
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
Typ.
–
–
6
2.9
2.85
560
–
–
Max.
1
0.5
7.5
3.7
–
–
3.2
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Resistive
Turn-on Delay Time
t_d(on)
V_CC = 600V, I_C = 150A,
Load
Rise Time
t_r
V_GE1 = V_GE2 = 15V,
Switch
Turn-off Delay Time
t_d(off)
R_G = 2.1⍀, Resistive
Times
Fall Time
t_f
Load Switching Operation
Diode Reverse Recovery Time**
t_rr
I_E = 150A, di_E/dt = -300A/µs
Diode Reverse Recovery Charge**
Q_rr
I_E = 150A, di_E/dt = -300A/µs
Diode Reverse Recovery Time
t_rr
I_F = 150A, Clamp Diode Part
Diode Reverse Recovery Charge
Q_rr
di_F/dt = -300A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
–
22
nf
–
–
7.4
nf
–
–
4.4
nf
–
–
200
ns
–
–
250
ns
–
–
300
ns
–
–
350
ns
–
–
300
ns
–
0.82 –
µC
–
–
300
ns
–
0.82 –
µC
140