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| CM100DY-34A Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100DY-34A
Dual IGBTMOD⢠A-Series Module
100 Amperes/1700 Volts
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
103
tf
td(off)
102
td(on)
tr
101
100
101
VCC = 1000V
VGE = 15V
RG = 4.7â¦
Tj = 125°C
Inductive Load
102
103
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
103
VCC = 1000V
VGE = 15V
IC = 100A
Tj = 125°C
Inductive Load
102
Eon
Eoff
Err
101
100
101
102
GATE RESISTANCE, RG, (â¦)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
SWITCHING TIME VS.
GATE RESISTANCE (TYPICAL)
103
102
101
100
100
tf
td(off)
td(on)
tr
VCC = 1000V
VGE = 15V
IC = 100A
Tj = 125°C
Inductive Load
101
GATE RESISTANCE, RG, (â¦)
102
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
VCC = 1000V
VGE = 15V
RG = 4.7â¦
Tj = 25°C
Inductive Load
102
102
101
101
102
EMITTER CURRENT, IC, (AMPERES)
Irr
trr
101
103
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
102
VCC = 1000V
VGE = 15V
RG = 4.7â¦
Tj = 125°C
Inductive Load
101
Err
Eoff
Eon
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
GATE CHARGE VS. VGE
20
IC = 100A
16
VCC = 800V
12
VCC = 1000V
8
4
0
0 200 400 600 800 1000
GATE CHARGE, QG, (nC)
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.13°C/W
(IGBT)
Rth(j-c) =
0.21°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
4
01/10 Rev. 1
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