CM100DY-34A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM100DY-34A
Dual IGBTMOD™ A-Series Module
100 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Per IGBT*⁴
Per FWDi*⁴
Thermal Grease Applied^*4,*5
External Gate Resistance
RG
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Min.
Typ.
Max. Units
—
—
0.13 °C/W
—
—
0.21 °C/W
—
—
—
°C/W
4.8
—
48
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
200
V_GE =
13
20V
12
160
15
T_j = 25^oC
120
11
80
10
40
8
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 200A
I_C = 100A
6
I_C = 40A
4
2
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
10³
50
100
150 200
COLLECTOR-CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
T_j = 25°C
T_j = 125°C
10¹
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
V_CE = 10V
T_j = 25°C
160
T_j = 125°C
120
80
40
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
V_GE = 0V
C_ies
10¹
10⁰
C_oes
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
01/10 Rev. 1
3