English
Language : 

CM100DY-24A Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DY-24A
Dual IGBTMOD™ A-Series Module
100 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 25°C
Inductive Load
102
102
101
101
102
EMITTER CURRENT, IE, (AMPERES)
Irr
trr
101
103
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
102
ESW(on)
ESW(off)
GATE CHARGE VS. VGE
20
IC = 100A
16
VCC = 400V
12
VCC = 600V
8
4
0
0 160 320 480 640 800
GATE CHARGE, QG, (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
102
101
100
100
VCC = 600V
VGE = 15V
IC = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
GATE RESISTANCE, RG, (Ω)
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
101
100
101
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
102
EMITTER CURRENT, IE, (AMPERES)
103
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
102
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
101
100
101
ESW(on)
ESW(off)
102
103
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
VCC = 600V
VGE = 15V
IC = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
100
10-1
100
101
GATE RESISTANCE, RG, ()
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.186°C/W
(IGBT)
Rth(j-c) =
0.34°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
4