CM100DY-24A Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD A-Series Module 100 Amperes/1200 Volts

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CM100DY-24A
Dual IGBTMOD™ A-Series Module
100 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*TC, Tf measured point is just under the chips.
Rth(j-c)Q
Per IGBT 1/2 Module
—
Rth(j-c)D
Per FWDi 1/2 Module
—
Rth(c-f) Per 1/2 Module, Thermal Grease Applied —
RG
3.1
Typ.
—
—
0.022
—
Max.
0.186
0.34
—
42
Units
°C/W
°C/W
°C/W
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
200
V_GE =
20V
13
T_j = 25^oC
15
150
12
100
11
50
10
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
10²
10¹
01
T_j = 25°C
T_j = 125°C
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
V_GE = 15V
T_j = 25°C
3
T_j = 125°C
2
1
0
0
50
100
150
200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
V_GE = 0V
C_ies
10¹
10⁰
10^-1
C_oes
C_res
10^-2
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 200A
6
I_C = 40A
4
I_C = 100A
2
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
10²
t_d(off)
t_d(on)
t_r
10¹
10⁰
10¹
V_CC = 600V
V_GE = 15V
R_G = 3.1Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
3