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| BCR16PM Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR16PM
Isolated Triac
16 Amperes/400-600 Volts
GATE TRIGGER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
103
102
101
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
REPETITIVE PEAK OFF-STATE CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
105
104
103
102
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6â
6â
A
A
6V
RG 6V
RG
V
V
TEST PROCEDURE I
TEST PROCEDURE II
6â
A
6V
RG
V
TEST PROCEDURE III
BREAKOVER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
160
140
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE, Tj, (°C)
COMMUTATION CHARACTERISTICS
(TYPICAL)
103
Tj = 125oC
IT = 4A
ⶠ= 500â®s
VD = 200v
102 f = 3Hz
VOLTAGE WAVEFORM
t
(dv/dt)c
VD
CURRENT WAVEFORM
MINIMUM
CHARAC-
TERISTICS
VALUE
101
IT
(di/dt)c
â¶
t
I QUADRANT
III QUADRANT
100
100
101
102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT, (A/ms)
103
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
(TYPICAL)
160
Tj = 125°C
140
I QUADRANT
III QUADRANT
120
100
80
#2
60
#1
40
20
0
101
102
103
104
RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/â®s)
GATE TRIGGER CURRENT
VS. GATE CURRENT PULSE WIDTH
(TYPICAL)
103
102
Tj = 25°C
IFGT I
IRGT I
IRGT III
101
100
101
GATE CURRENT PULSE WIDTH, tw, (â®s)
102
⬠Part
Number
Commutating
dv/dt, (dv/dt)c
VDRM
(V/msec)
(Volts) Load Type Minimum
Test Condition
BCR16PM-8L 400
L
10
Tj = 125°C,
BCR16PM-12L 600
L
10
Rate of Decay
On-state
Commutating
Current
(di/dt)c = -8A/msec;
Peak Off-state
Voltage
VD = 400V
Commutating Voltage &
Current Waveform
(Inductive Load)
SUPPLY
VOLTAGE
MAIN
CURRENT
MAIN
VOLTAGE
(dv / dt)C
t
(di / dt)C
t
VD
t
VD
T-82
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