English
Language : 

BCR16PM Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR16PM
Isolated Triac
16 Amperes/400-600 Volts
Absolute Maximum Ratings, Ta = 25 °C unless otherwise specified
Ratings
Symbol
Repetitive Peak Off-state Voltage
Non-repetitive Peak Off-state Voltage
On-state Current, Tc = 71°C
Non-repetitive Peak Surge, One Cycle (60 Hz)
I2t for Fusing, t = 8.3 msec
VDRM
VDSM
IT(RMS)
ITSM
I2t
Peak Gate Power Dissipation, 20 ␮sec
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Storage Temperature
Operating Junction Temperature
Isolation Voltage
Weight
PGM
PG(avg)
IGM
VGM
Tstg
Tj
Viso
–
BCR16PM-8
400
500
16
160
106.5
5
0.5
2
10
-40 to 125
-40 to 125
1500
2
BCR16PM-12
600
720
16
160
106.5
5
0.5
2
10
-40 to 125
-40 to 125
1500
2
Units
Volts
Volts
Amperes
Amperes
A2sec
Watts
Watts
Amperes
Volts
°C
°C
Volts
Grams
Electrical and Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Gate Parameters
DC Gate Trigger Current
Symbol
Test Conditions (Trigger Mode)
VD
RL
RG
Tj
MT2+ Gate+
MT2+ Gate–
MT2– Gate–
DC Gate Trigger Voltage
IFGT I
IRGT I
IRGT III
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
MT2+ Gate+
MT2+ Gate–
MT2– Gate–
DC Gate Non-trigger Voltage
VFGT I
VRGT I
VRGT III
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
All
VGD
1/2 VDRM –
–
125°C
BCR16PM
Min.
Typ. Max.
Units
–
–
–
–
–
–
–
–
–
–
–
–
0.2
–
30
mA
30
mA
30
mA
1.5 Volts
1.5 Volts
1.5 Volts
–
Volts
Characteristics
Thermal Resistance, Junction-to-case
Voltage – Blocking State
Repetitive Off-state Current
Current – Conducting State
Peak On-state Voltage
Critical Rate-of-rise of Commutating
Off-state Voltage (Commutating dv/dt)
v for inductive load (L)
(Switching)
Symbol
Rth(j-c)
IDRM
VTM
(dv/dt)c
Test Conditions
–
Gate Open Circuited,
VD = VDRM, Tj = 125°C
Tc = 25°C,
ITM = 25A
–
Min.
Typ. Max. Units
–
–
3
°C/W
–
–
2
mA
–
–
1.6 Volts
–
–
–
V/␮s
T-80