BCR16CS Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE COPPER
140
AND ALUMINUM
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
120 120 t2.3
100
100 100 t2.3
80
60 60 t2.3
60
RESISTIVE,
40 INDUCTIVE
LOADS
20 _NATURAL
CONVECTION
0
02468
10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
5
DISTRIBUTION T2⁺, G^–
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3
2
T2⁺,
T2^– ,
G⁺
G^–

TYPICAL
EXAMPLE
10⁰
–40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
Feb.1999