BCR16CS Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR16CS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
4
10.5 MAX
TYPE
∗
NAME
VOLTAGE
CLASS
1
5
0.8
Dimensions
in mm
4.5
1.3
0
+0.3
–0
0.5
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) ^V5
APPLICATION
Solid state relay, hybrid IC
123
∗ Measurement
point of case
24
temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
4 T2 TERMINAL
TO-220S
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage ^V1
400
600
V
VDSM
Non-repetitive peak off-state voltage ^V1
500
720
V
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=100°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
16
A
170
A
121
A²s
5.0
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
1.2
g
Feb.1999