QJD1210006 Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Silicon Carbide MOSFET Module 100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QJD1210006
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Preliminary
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Diode Forward Voltage
Diode Capacitive Charge
Symbol
Test Conditions
Min.
Typ.
Max. Units
VFM
IF = 50A, VGS = -5V
—
1.6
2.0
Volts
IF = 50A, VGS = -5V, Tj = 175°C
—
2.5
3.2
Volts
QC
VR = 1200V, IF = 50A, di/dt = 2000A/μs —
400
—
nC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Contact Thermal Resistance
Symbol
Test Conditions
Min.
Rth(j-c)
MOSFET Part
—
Rth(j-c)
Diode Part
—
Rth(c-s) Per 1/2 Module, Thermal Grease Applied —
Typ.
0.17
0.28
0.04
Max.
—
—
—
Units
°C/W
°C/W
°C/W
TYPICAL OUTPUT CHARACTERISTICS
(T_j = 25ºC)
600
T_j = 25°C
500
V_GE = 20V
18
400
16
300
14
200
12
100
10
0
0
4
8 12 16 20
DRAIN-SOURCE VOLTAGE, V_DS, (VOLTS)
NORMALIZED ON-RESISTANCE
VS. TEMPERATURE
2.0
V_GS = 20V
1.6
1.2
0.8
0.4
0
0
50
100
150
200
JUNCTION TEMPERATURE, T_j, (°C)
TYPICAL OUTPUT CHARACTERISTICS
(T_j = 175ºC)
500
V_GE = 20V
18
400
16
14
300
12
200
10
100
0
0
4
8 12 16 20
DRAIN-SOURCE VOLTAGE, V_DS, (VOLTS)
50nF
TYPICAL CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
V_GS = 20V
f = 1MHz
C_iss
5nF
C_oss
500pF
C_rss
50pF
0
200 400 600 800 1000
DRAIN-SOURCE VOLTAGE, V_DS, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
T_j = 25°C
T_j = 175°C
300
200
100
0
0
5
10
15
20
GATE SOURCE VOLTAGE, V_GS, (VOLTS)
GATE CHARGE VS. VGE
20
16
I_D = 100A
12
8
4
0
0 100 200 300 400 500 600
GATE CHARGE, Q_G, (nC)
04/12 Rev. 6
3