QJD1210006 Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Silicon Carbide MOSFET Module 100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com
QJD1210006 Preliminary
Silicon Carbide
MOSFET Module
100 Amperes/1200 Volts
A
D
Y
K
K
K
Y
F
Z
AB
AA
S1D2
S2
D1
M
U
H
J EB ^UU
H
AC
U AD
Q
Q
P
N
G
S - NUTS (3 TYP)
T - (4 TYP)
W
V
W
V
R
V
X
Y
C
LABEL
L
S1D2
S2
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C
1.14+0.04/-0.01 29.0+1.0/-0.5
D
3.66±0.01 93.0±0.25
E
1.88±0.01 48.0±0.25
F
0.67
17.0
G
0.16
4.0
H
0.24
6.0
J
0.59
15.0
K
0.55
14.0
L
0.87
22.0
M
0.33
8.5
N
0.10
2.5
P
0.85
21.5
G2
S2
D1
S1
G1
Dimensions
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
AC
AD
Inches
0.98
0.11
M6 Metric
0.26 Dia.
0.02
0.71
0.28
0.16
0.3
0.325
0.624
0.709
0.69
1.012
Millimeters
25.0
2.8
M6
Dia. 6.5
0.5
18.0
7.0
4.0
7.5
8.25
15.85
18.0
17.5
25.7
Description:
Powerex Silicon Carbide MOSFET
Modules are designed for use in
high frequency application. Each
module consists of two MOSFET
Silicon Carbide Transistors in
half-bridge configuration with
each transistor having a reverse
connected fast recovery free-wheel
silicon carbide Schottky diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Junction Temperature - 200°C
£ Silicon Carbide Chips
£ Industry Leading RDS(on)
£ High Speed Switching
£ Low Switching Losses
£ Low Capacitance
£ Low Drive Requirement
£ Fast 50A Free Wheeling
Schottky Diode
£ High Power Density
£ Isolated Baseplate
£ Aluminum Nitride Ceramic
Applications:
£ High Frequency Power Supply
£ High Efficiency Inverter
£ High Temperature Environment
04/12 Rev. 6
1