QIS2510001 Datasheet, PDF (3/3 Pages) Powerex Power Semiconductors – Single Discrete IGBT 100 Amperes/2500 Volts

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QIS2510001
Single Discrete IGBT
100 Amperes/2500 Volts
Preliminary
OUTPUT CHARACTERISTICS
(TYPICAL)
200
T_j = 25°C
15V
150
V_GE = 20V
14V
13V
12V
11V
100
10V
TRANSFER CHARACTERISTICS
(TYPICAL)
200
V_CE = 10V
T_j = 25°C
T_j = 125°C
150
100
50
9V
7V 8V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTAGE)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
6
4
I_C = 40A
I_C = 200A
I_C = 100A
2
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
V_CC = 1250V
I_C = 100A
16
12
8
4
0
0
250
500 750 1000
GATE CHARGE, Q_G, (nC)
50
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10²
10¹
C_ies
10⁰
C_oes
V_GE = 0V
T_j = 25°C
C_ies, C_oes: f = 100kHz
C_res: f = 1MHz
10^-1
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
50
100
150
200
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
250
V_CC = 1250V
V_GE = ±15V
200 ^RG ^{= 30Ω}
T_j = 125°C
150
E_on
100
E_off
50
0
0
25
50 75 100 125
COLLECTOR CURRENT, I_C, (AMPERES)
01/10 Rev. 0
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