QIS2510001 Datasheet, PDF (2/3 Pages) Powerex Power Semiconductors – Single Discrete IGBT 100 Amperes/2500 Volts

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QIS2510001
Single Discrete IGBT
100 Amperes/2500 Volts
Preliminary
Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current (DC, T_C = 127°C)
Peak Collector Current (Pulsed)
Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Weight (Typical)
Symbol
V_CES
V_GES
I_C
I_CM
T_j
T_stg
—
—
QIS2510001
2500
±20
100
200*
-55 to 150
-55 to 125
30
20
Units
Volts
Volts
Amperes
Amperes
°C
°C
in-lb
Grams
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
—
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
—
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 10mA, V_CE = 10V
4.5
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 100A, V_GE = 15V, T_j = 25°C
—

I_C = 100A, V_GE = 15V, T_j = 125°C
—
Total Gate Charge
Q_G
V_CC = 1250V, I_C = 100A, V_GE = 15V
—
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
C_ies
—
Output Capacitance
C_oes
V_GE = 0V, V_CE = 10V
—
Reverse Transfer Capacitance
C_res
—
Resistive
Turn-on Delay Time
t_d(on)
V_CC = 1250V,
—
Load
Rise Time
t_r
I_C = 100A,
—
Switching
Turn-off Delay Time
t_d(off)
V_GE1 = V_GE2 = 15V,
—
Times
Fall Time
t_f
R_G = 30Ω
—
Turn-on Switching Energy
E_on
T_j = 125°C, I_C = 100A, V_CC = 1250V,
—
Turn-off switching Energy
E_off
V_GE = ±15V, R_G = 30Ω, Inductive Load
—
Typ.
Max. Units
—
1.0
mA
—
0.5
µA
6.0
7.5
Volts
3.20 4.20** Volts
3.60
—
Volts
450
—
nC
Typ.
Max. Units
10
—
nF
1.1
—
nF
330
—
pF
—
TBD
µs
—
TBD
µs
—
TBD
µs
—
TBD
µs
125
—
mJ/P
100
—
mJ/P
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Grease Applied
R_th(j-c)
R_th(c-s)
IGBT
λ_grease = 1W/mK
* Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed device rating.
**Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min.
—
—
Typ.
0.10
0.10
Max.
TBD
—
Units
°C/W
°C/W
2
01/10 Rev. 0