CM75TF-28H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75TF-28H
Six-IGBT IGBTMOD™ H-Series Module
75 Amperes/1400 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
150
V_GE = 20V
15
14
13
120
T_j = 25^oC
12
90
11
60
10
30
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
6
I_C = 150A
4
I_C = 75A
2
I_C = 30A
0
0
10⁴
10³
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
V_CC = 800V
V_GE = ±15V
R_G = 4.2 Ω
T_j = 125°C
t_f
10²
t_d(on)
10¹
10¹
t_r
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
TRANSFER CHARACTERISTICS
(TYPICAL)
150
V_CE = 10V
T_j = 25°C
120
T_j = 125°C
90
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
60
2
30
1
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
10¹
10⁰
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10¹
I_rr
t_rr
10²
10⁰
0
0
30
60 90 120 150
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
10¹
C_ies
10⁰
C_oes
10^-1
C_res
V_GE = 0V
f = 1MHz
10^-2
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 75A
16
V_CC = 600V
V_CC = 800V
12
8
di/dt = -150A/µsec
T_j = 25°C
10¹
10⁰
10¹
EMITTER CURRENT, I_E, (AMPERES)
10^-1
10²
4
0
0
150
300
450
600
GATE CHARGE, Q_G, (nC)
353