CM75TF-28H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM75TF-28H
Six-IGBT IGBTMOD™ H-Series Module
75 Amperes/1400 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E-SHORT)
Gate-Emitter Voltage (C-E-SHORT)
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Pulse Current
Power Dissipation
Max. Mounting Torque M5 Terminal Screws
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_EC
I_ECM
P_d
–
Max. Mounting Torque M5 Mounting Screws
–
Module Weight (Typical)
–
V Isolation
V_RMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
I_CES
I_GES
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V_GE(th)
V_CE(sat)
I_C = 7.5mA, V_CE = 10V
I_C = 75A, V_GE = 15V
I_C = 75A, V_GE = 15V, T_j = 150°C
Total Gate Charge
Q_G
V_CC = 800V, I_C = 75A, V_GS = 15V
Diode Forward Voltage
V_FM
I_E = 75A, V_GS = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
V_GE = 0V, V_CE = 10V, f = 1MHz
V_CC = 800V, I_C = 75A,
V_GE1 = V_GE2 = 15V, R_G = 4.2Ω
I_E = 75A, di_E/dt = –150A/µs
I_E = 75A, di_E/dt = –150A/µs
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c)
R_th(j-c)
R_th(c-f)
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
352
CM75TF-28H
–40 to 150
–40 to 125
1400
±20
75
150*
75
150*
600
17
17
830
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min.
Typ.
Max. Units
–
–
1.0
mA
–
–
0.5
µA
5.0
6.5
8.0
Volts
–
3.1
4.2** Volts
–
2.95
–
Volts
–
383
–
nC
–
–
3.8
Volts
Min.
Typ.
Max. Units
–
–
15
nF
–
–
5.3 nF
–
–
3
nF
–
–
150
ns
–
–
350
ns
–
–
250
ns
–
–
500
ns
–
–
300
ns
–
0.75
–
µC
Min.
Typ.
Max. Units
–
–
0.21 °C/W
–
–
0.47 °C/W
–
–
0.025 °C/W