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| CM600HA-28H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-28H
Single IGBTMOD⢠H-Series Module
600 Amperes/1400 Volts
1200
1000
OUTPUT CHARACTERISTICS
(TYPICAL)
15 13
Tj = 25oC
12
VGE = 20V
800
11
600
10
400
200
9
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 1200A
6
IC = 600A
4
2
IC = 240A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
td(off)
tf
td(on)
102
101
101
tr
VCC = 800V
VGE = ±15V
RG = 2.1 â¦
Tj = 125°C
102
103
COLLECTOR CURRENT, IC, (AMPERES)
1200
1000
800
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
Tj = 25°C
Tj = 125°C
600
400
200
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
Tj = 25°C
103
102
101
1.0 1.5 2.0 2.5 3.0 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
Irr
trr
102
101
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0 200 400 600 800 1000 1200
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
103
102
Cies
101
Coes
Cres
100
VGE = 0V
f = 1MHz
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 600A
16
VCC = 600V
VCC = 800V
12
8
di/dt = -1200A/µsec
Tj = 25°C
101
101
102
EMITTER CURRENT, IE, (AMPERES)
100
103
4
0
0 800 1600 2400 3200 4000 4800
GATE CHARGE, QG, (nC)
213
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