CM600HA-28H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM600HA-28H
Single IGBTMOD™ H-Series Module
600 Amperes/1400 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_F
I_FM
P_d
–
–
–
V_RMS
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 60mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 600A, V_GE = 15V
I_C = 600A, V_GE = 15V, T_j = 150°C
Total Gate Charge
Q_G
V_CC = 800V, I_C = 600A, V_GE = 15V
Diode Forward Voltage
V_FM
I_E = 600A, V_GE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
C_oes
V_GE = 0V, V_CE = 10V, f = 1MHz
Reverse Transfer Capacitance
C_res
Resistive
Turn-on Delay Time
t_d(on)
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t_r
t_d(off)
t_f
t_rr
Q_rr
V_CC = 800V, I_C = 600A,
V_GE1 = V_GE2 = 15V, R_G = 2.1Ω
I_E = 600A, di_E/dt = –1200A/µs
I_E = 600A, di_E/dt = –1200A/µs
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
R_th(j-c)
Per IGBT
Thermal Resistance, Junction to Case
R_th(j-c)
Per FWDi
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
212
CM600HA-28H
–40 to 150
–40 to 125
1400
±20
600
1200*
600
1200*
4100
95
26
560
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min.
Typ.
Max. Units
–
–
2.0
mA
–
–
0.5
µA
5.0
6.0
8.0
Volts
–
3.1
4.2** Volts
–
2.95
–
Volts
–
3060
–
nC
–
–
3.8
Volts
Min.
Typ.
Max. Units
–
–
120
nF
–
–
42
nF
–
–
24
nF
–
–
350
ns
–
–
700
ns
–
–
500
ns
–
–
500
ns
–
–
300
ns
–
6.0
–
µC
Min.
Typ.
Max. Units
–
–
0.03 °C/W
–
–
0.06 °C/W
–
–
0.035 °C/W