CM600HA-24A_10 Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Single IGBTMOD A-Series Module

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CM600HA-24A
Single IGBTMOD™ A-Series Module
600 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Per IGBT*⁴
Per FWDi*⁴
Case to Heatsink,
Thermal Grease Applied*^4,*⁵
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Min.
Typ.
Max. Units
—
—
0.034 °C/W
—
—
0.051 °C/W
—
0.02
—
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
V_GE =
20V
13
T_j = 25°C
15
900
12
600
11
300
10
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
10³
10²
10¹
01
T_j = 25°C
T_j = 125°C
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
V_GE = 15V
T_j = 25°C
3
T_j = 125°C
2
1
0
0
300
600
900 1200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 1200A
6
I_C = 240A
4
I_C = 600A
2
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_f
t_d(on)
10²
10¹
10¹
t_r
V_CC = 600V
V_GE = 15V
R_G = 0.52Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
01/10 Rev. 1
3