CM600HA-24A_10 Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Single IGBTMOD A-Series Module

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CM600HA-24A
Single IGBTMOD™ A-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, TC = 87°C)*⁴
Peak Collector Current (Pulse, Repetitive)*²
Maximum Collector Dissipation (TC = 25°C)*^2,*⁴
Emitter Current (TC = 25°C)
Peak Emitter Current (Pulse, Repetitive)*²
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 G(E) Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
PC
IE*¹
IEM*¹
—
—
—
—
VISO
CM600HA-24A
–40 to 150
–40 to 125
1200
±20
600
1200
3670
600
1200
26
26
13
480
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
in-lb
in-lb
in-lb
Grams
Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
Gate Leakage Current
IGES
±VGE = VGES, VCE = 0V
—
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Forward Transfer Admittance
VGE(th)
IC = 60mA, VCE = 10V
6.0
VCE(sat)
IC = 600A, VGE = 15V, Tj = 25°C*³
—
IC = 600A, VGE = 15V, Tj = 125°C*³
—
|γ_fs|
IC = 600A, VCE = 10V*³
120
Input Capacitance
Cies
—
Output Capacitance
Coes
VCE = 10V, VGE = 0V
—
Reverse Transfer Capacitance
Cres
—
Total Gate Charge
QG
VCC = 600V, IC = 600A, VGE = 15V
—
Inductive
Turn-on Delay Time
td(on)
—
Load
Rise Time
tr
VCC = 600V, IC = 600A,
—
Switch
Turn-off Delay Time
td(off)
VGE = ±15V, RG = 0.52Ω,
—
Time
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Emitter-Collector Voltage
tf
Inductive Load
—
trr*¹
IE = 600A
—
Qrr*¹
—
VEC*¹
IE = 600A, VGE = 0V*³
—
External Gate Resistance
RG
0.52
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
Typ.
—
—
7.0
2.1
2.4
—
—
—
—
3000
—
—
—
—
—
19.0
—
—
Max.
1.0
1.5
8.0
3.0
—
—
105
9
2.0
—
660
190
700
350
250
—
3.8
7.8
Units
mA
µA
Volts
Volts
Volts
S
nf
nf
nf
nC
ns
ns
ns
ns
ns
µC
Volts
Ω
2
01/10 Rev. 1