CM600DY-12NF Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM600DY-12NF
Dual IGBTMOD™ NF-Series Module
600 Amperes/600 Volts
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module, T_C Reference
—

Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi 1/2 Module, T_C Reference
—

Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)’Q
Per IGBT 1/2 Module,
—

T_C Reference Point Under Chips
Contact Thermal Resistance
R_th(c-f) Per 1/2 Module, Thermal Grease Applied —
External Gate Resistance
R_G
1.0
Typ.
Max. Units
—
0.11 °C/W
—
0.18 °C/W
—
0.046 °C/W
0.02
—
°C/W
—
10
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
V_GE =
13
20V
15
900
T_j = 25^oC
12
600
11
300
10
8
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
T_j = 25°C
T_j = 125°C
10³
10²
10¹
01
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
V_GE = 15V
T_j = 25°C
3
T_j = 125°C
2
1
0
0
300
600
900 1200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
10²
C_ies
10¹
C_oes
V_GE = 0V
C_res
10⁰
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 1200A
6
I_C = 600A
I_C = 240A
4
2
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(on)
t_f
t_d(off)
10²
t_r
10¹
10⁰
10¹
V_CC = 300V
V_GE = ±15V
R_G = 4.2Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
Rev. 09/09
3