CM600DY-12NF Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM600DY-12NF
Dual IGBTMOD™ NF-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, T_C´ = 89°C)
Peak Collector Current
Emitter Current** (T_C = 25°C)
Emitter Surge Current**
Maximum Collector Dissipation (T_C = 25°C, T_j ≤ 150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_C
—
—
—
V_ISO
CM600DY-12NF
–40 to 150
–40 to 125
600
±20
600
1200*
600
1200*
1130
40
40
580
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
Gate Leakage Current
I_GES
Gate-Emitter Threshold Voltage
V_GE(th)
Collector-Emitter Saturation Voltage
V_CE(sat)

Total Gate Charge
Q_G
Emitter-Collector Voltage**
V_EC
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
I_C = 60mA, V_CE = 10V
I_C = 600A, V_GE = 15V, T_j = 25°C
I_C = 600A, V_GE = 15V, T_j = 125°C
V_CC = 300V, I_C = 600A, V_GE = 15V
I_E = 600A, V_GE = 0V
Min.
Typ.
Max. Units
—
—
1.0
mA
—
—
0.5
µA
5.0
6.0
7.5
Volts
—
1.7
2.2
Volts
—
1.7
—
Volts
—
2400
—
nC
—
—
2.6
Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
C_ies
—
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
—
Reverse Transfer Capacitance
C_res
—
Inductive
Turn-on Delay Time
t_d(on)
—
Load
Rise Time
t_r
V_CC = 300V, I_C = 600A,
—
Switch
Turn-off Delay Time
t_d(off)
V_GE1 = V_GE2 = 15V, R_G = 4.2Ω,
—
Time
Fall Time
t_f
Inductive Load
—
Diode Reverse Recovery Time**
t_rr
Switching Operation,
—
Diode Reverse Recovery Charge**
Q_rr
I_E = 600A
—
*Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***T_C´ measured point is just under the chips. If this value is used, R_th(f-a) should be measured just under the chips.
—
90
nf
—
11.0 nf
—
3.6 nf
—
500
ns
—
300
ns
—
750
ns
—
300
ns
—
250
ns
8.7
—
µC
2
Rev. 09/09