CM500HA-34A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM500HA-34A
Single IGBTMOD™ A-Series Module
500 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Per IGBT*⁴
—
Rth(j-c)D
Per FWDi*⁴
—
Rth(c-f) Case to Heatsink,Thermal Grease Applied*^4,*⁵ —
External Gate Resistance
RG
3.0
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Typ.
—
—
0.015
—
Max.
0.025
0.042
—
10
Units
°C/W
°C/W
°C/W
Ω
1000
800
OUTPUT CHARACTERISTICS
(TYPICAL)
V_GE =
13
20V
15
12
T_j = 25^oC
600
11
400
10
200
8
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 1000A
I_C = 500A
6
I_C = 200A
4
2
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_CE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
10⁴
200 400 600 800 1000
COLLECTOR-CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
10²
T_j = 25°C
T_j = 125°C
10¹
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
V_GE = 10V
T_j = 25°C
160
T_j = 125°C
120
80
40
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
02/10 Rev. 1
3