CM400HA-24A Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ A-Series Module 400 Amperes/1200 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM400HA-24A
Single IGBTMOD™ A-Series Module
400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*TC, Tf measured point is just under the chips.
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
RG
Per IGBT
—
Per FWDi
—
Thermal Grease Applied
—
0.78
Typ.
—
—
0.02
—
Max.
0.053
0.085
—
10
Units
°C/W
°C/W
°C/W
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
800
V_GE =
20V
13
T_j = 25^oC
15
600
12
400
11
200
10
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
10²
10¹
01
T_j = 25°C
T_j = 125°C
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
V_GE = 15V
T_j = 25°C
3
T_j = 125°C
2
1
0
0
200
400
600
800
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 800A
6
I_C = 160A
4
I_C = 400A
2
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_d(on^tf)
10²
10¹
10¹
t_r
V_CC = 600V
V_GE = 15V
R_G = 0.78Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
3