CM400HA-24A Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ A-Series Module 400 Amperes/1200 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM400HA-24A
Single IGBTMOD™ A-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, TC = 87°C*)
Peak Collector Current
Emitter Current*** (TC = 25°C)
Peak Emitter Current***
Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 G(E) Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
—
—
—
—
VISO
CM400HA-24A
–40 to 150
–40 to 125
1200
±20
400
800**
400
800**
2350
40
40
15
480
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 40mA, VCE = 10V
IC = 400A, VGE = 15V, Tj = 25°C
IC = 400A, VGE = 15V, Tj = 125°C
VCC = 600V, IC = 400A, VGE = 15V
IE = 400A, VGE = 0V
Min.
Typ.
Max. Units
—
—
1.0
mA
—
—
0.5
µA
6.0
7.0
8.0
Volts
—
2.1
3.0
Volts
—
2.4
—
Volts
—
2000
—
nC
—
—
3.8
Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Cies
—
Output Capacitance
Coes
VCE = 10V, VGE = 0V
—
Reverse Transfer Capacitance
Cres
—
Inductive
Turn-on Delay Time
td(on)
—
Load
Rise Time
tr
VCC = 600V, IC = 400A,
—
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 0.78Ω,
—
Time
Fall Time
tf
Inductive Load
—
Diode Reverse Recovery Time***
trr
Switching Operation,
—
Diode Reverse Recovery Charge***
Qrr
IE = 400A
—
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
—
—
—
—
—
—
—
—
14.7
Max.
70
6
1.4
550
180
600
350
250
—
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
2