CM35MXA-24S_13 Datasheet, PDF (3/15 Pages) Powerex Power Semiconductors – Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM35MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
35 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Converter Part ConvDi
Characteristics
Repetitive Peak Reverse Voltage (V_GE = 0V)
Recommended AC Input Voltage (RMS)
DC Output Current (3-Phase Full Wave Rectifying, T_C = 125°C)^*4
Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60Hz, Non-repetative)
Current Square Time (Value for One Cycle of Surge Current)
Maximum Junction Temperature, Instantaneous Event (Overload)
Symbol
V_RRM
E_a
I_O
I_FSM
I²t
T_j(max)
Rating
1600
480
35
350
510
150
Units
Volts
Volts
Amperes
Amperes
A²s
°C
Module
Characteristics
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Case Temperature^*4
Operating Junction Temperature, Continuous Operation (Under Switching)
Storage Temperature
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
Symbol
V_ISO
T_C(max)
T_j(op)
T_stg
Rating
2500
125
-40 to +150
-40 to +125
Units
Volts
°C
°C
°C
0
18.4
54
20.4
55
30.3
56
31.3
57
58
43.9
59
60
44.9
61
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Tr Di
Br Br
CR CR CR
RN SN TN
CR CR CR
RP SP TP
Di Di
30
UN VN
Tr Tr
Di
WN
Tr
WN
Th
29
28
UN VN
27
Di
26
Tr Di
UP UP
Tr Di
VP VP
Tr ^WP
WP
25
24
23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
19.6
24.9 ^22.0
26.2 ^25.8
34.2
40.8
43.8
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp Di
Th: NTC Thermistor
Di*P / Di*N (* = U/V/W): FWDi
CR*P / CR*N (* = R/S/T): Conv Di
03/13 Rev. 3
3