CM35MXA-24S_13 Datasheet, PDF (2/15 Pages) Powerex Power Semiconductors – Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM35MXA-24S
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
35 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 125°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current^*2
Emitter Current (Pulse, Repetitive)^*3
Maximum Junction Temperature, Instantaneous Event (Overload)
Brake Part IGBT/ClampDi
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 125°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Repetitive Peak Reverse Voltage (V_GE = 0V)
Forward Current^*2
Forward Current (Pulse, Repetitive)^*3
Maximum Junction Temperature, Instantaneous Event (Overload)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
T_j(max)
Rating
1200
±20
35
70
355
35
70
175
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
°C
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
V_RRM
I_F^*1
I_FRM^*1
T_j(max)
Rating
1200
±20
35
70
355
1200
35
70
175
Units
Volts
Volts
Amperes
Amperes
Watts
Volts
Amperes
Amperes
°C
0
18.4
54
20.4
55
30.3
56
31.3
57
58
43.9
59
60
44.9
61
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
Tr Di
Br Br
CR CR CR
RN SN TN
CR CR CR
RP SP TP
Di Di
30
UN VN
Tr Tr
Di
WN
Tr
WN
Th
29
28
UN VN
27
Di
26
Tr Di
UP UP
Tr Di
VP VP
Tr ^WP
WP
25
24
23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
19.6
24.9 ^22.0
26.2 ^25.8
34.2
40.8
43.8
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
DiBr: Clamp Di
Th: NTC Thermistor
Di*P / Di*N (* = U/V/W): FWDi
CR*P / CR*N (* = R/S/T): Conv Di
2
03/13 Rev. 3