CM200DU-12F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

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CM200DU-12F
Trench Gate Design Dual IGBTMOD™
200 Amperes/600 Volts
Dynamic Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
–
V_CE = 10V, V_GE = 0V
–
–
V_CC = 300V, I_C = 200A,
–
V_GE1 = V_GE2 = 15V,
–
R_G = 3.1,
–
Inductive Load
–
Switching Operation
–
I_E = 200A
–
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)'Q
Per IGBT 1/2 Module,
–
T_c Reference Point Under Chip
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
–
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
Max. Units
–
54
nf
–
3.6
nf
–
2
nf
–
120
ns
–
100
ns
–
350
ns
–
250
ns
–
150
ns
3.8
–
μC
Typ.
Max. Units
0.21 °C/W
–
0.35 °C/W
0.13
°C/W
0.045 –
°C/W
3