CM200DU-12F Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

CM200DU-12F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Trench Gate Design
Dual IGBTMOD™
200 Amperes/600 Volts
A
N
D
P - NUTS (3 TYP)
TC MEASURED POINT
Y
W
C2E1
E2
C1
B
Q (2
PLACES)
X
E
F
G
F
M
K
K
J
R
T
V
T
U
U
H (4
PLACES)
S
C
L
G2
E2
RTC
C2E1
C1
E2
RTC
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
A
3.70
B
1.89
C 1.18 +0.04/-0.02
D
3.15±0.01
E
0.43
F
0.16
G
0.71
H
0.02
J
0.53
K
0.91
L
0.83
M
0.67
Millimeters
94.0
48.0
30.0 +1.0/-0.5
80.0±0.25
11.0
4.0
18.0
0.5
13.5
23.0
21.2
17.0
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Z
Inches
0.28
M5
Dia. 0.26
0.02
0.30
0.63
0.10
1.0
0.94
0.51
0.47
0.47
Millimeters
7.0
M5
6.5 Dia.
4.0
7.5
16.0
2.5
25.0
24.0
13.0
12.0
12.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con-
sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V_CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-12F is a
600V (V_CES), 200 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
V_CES
Type
Amperes
Volts (x 50)
CM
200
12
1