CM150DY-28H Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 150 Amperes/1400 Volts

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CM150DY-28H
Dual IGBTMOD™ H-Series Module
150 Amperes/1400 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
T_j = 25^oC
250
V_GE = 20V
14
15
12
200
11
150
10
100
9
50
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 300A
6
I_C = 150A
4
2
I_C = 60A
0
0
10⁴
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
10³
t_f
10^{2 td(on)}
t_r
V_CC = 800V
V_GE = ±15V
R_G = 2.1Ω
T_j = 125°C
10¹
10¹
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
TRANSFER CHARACTERISTICS
(TYPICAL)
300
V_CE = 10V
250
T_j = 25°C
T_j = 125°C
200
150
100
50
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 50 100 150 200 250 300
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
C_ies
10¹
10¹
10⁰
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10⁴
10²
C_oes
10⁰
V_GE = 0V
f = 1MHz
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_rr
10³
10¹
t_rr
10²
10⁰
di/dt = -300A/µsec
T_j = 25°C
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10^-1
10³
16
V_CC = 600V
V_CC = 800V
12
8
4
0
0 200 400 600 800 1000
GATE CHARGE, Q_G, (nC)
3