CM150DY-28H Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 150 Amperes/1400 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150DY-28H
Dual IGBTMOD™ H-Series Module
150 Amperes/1400 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current
Peak Collector Current
Emitter Current
Emitter Current-Pulse
Maximum Collector Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* I_E, V_EC, T_rr, Q_rr & di_E/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
** Pulse width and repetition rate should be such that the device junction temp. (T_j) does not exceed T_j(max) rating.
*** Junction temperature (T_j) should not increase beyond 150°C.
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E*
I_EM*
P_c
–
–
–
V_RMS
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 15mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 150A, V_GE = 15V
I_C = 150A, V_GE = 15V, T_j = 125°C
Total Gate Charge
Q_G
V_CC = 800V, I_C = 150A, V_GE = 15V
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
C_oes
V_GE = 0V, V_CE = 10V
Reverse Transfer Capacitance
C_res
Resistive
Turn-on Delay Time
t_d(on)
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Emitter-Collector Voltage
Diode Reverse Recovery Charge
tr
t_d(off)
t_f
t_rr
V_EC
Q_rr
V_CC = 800V, I_C = 150A,
V_GE1 = V_GE2 = 15V, R_G = 2.1Ω
I_E = 150A, di_E/dt = –300A/µs
I_E = 150A, V_GE = 0V
I_E = 150A, di_E/dt = –300A/µs
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
2
R_th(j-c)
R_th(j-c)
R_th(c-f)
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
CM150DY-28H
–40 to 150
–40 to 125
1400
±20
150
300**
150
300**
1100***
17
26
270
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min.
Typ.
Max. Units
–
–
1.0
mA
–
–
0.5
µA
5.0
6.5
8.0
Volts
–
3.1
4.2* Volts
–
2.95
–
Volts
–
765
–
nC
Min.
Typ.
Max. Units
–
–
30
nF
–
–
10.5 nF
–
–
6
nF
–
–
250
ns
–
–
400
ns
–
–
300
ns
–
–
500
ns
–
–
300
ns
–
–
3.8
V
–
1.5
–
µC
Min.
Typ.
Max. Units
–
–
0.11 °C/W
–
–
0.24 °C/W
–
–
0.13 °C/W