CM1400DU-24NF Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Mega Power Dual™ IGBTMOD 1400 Amperes/1200 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM1400DU-24NF
Mega Power Dual™ IGBTMOD
1400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
R_th(j-c')Q
Per IGBT 1/2 Module,
–
T_C Reference Point Under Chip
R_th(j-c')D Per FWDi 1/2 Module, T_C Reference
–
T_C Reference Point Under Chip
Contact Thermal Resistance
R_th(c-f) Per 1/2 Module, Thermal Grease Applied –
Typ.
Max. Units
–
0.014 °C/W
–
0.023 °C/W
0.016 –
°C/W
2800
2400
2000
OUTPUT CHARACTERISTICS
(TYPICAL)
V_GE = 20V
T_j = 25^oC
15
13
12
1600
11
1200
800
10
400
89
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
6
I_C = 1400A
4
I_C = 560A
2
I_C = 2800A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
2800
2400
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 10V
T_j = 25°C
T_j = 125°C
1600
1200
800
400
0
0
10⁴
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
T_j = 125°C
10²
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 400 600 1200 1600 2000 2400 2800
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
V_GE = 0V
C_ies
10²
C_oes
10¹
C_res
10⁰
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
3