CM1400DU-24NF Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Mega Power Dual™ IGBTMOD 1400 Amperes/1200 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM1400DU-24NF
Mega Power Dual™ IGBTMOD
1400 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_C = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current (T_C = 25°C)**
Peak Emitter Current**
Maximum Collector Dissipation (T_j < 150°C) (T_C' = 25°C)
Mounting Torque, M6 Mounting Screws
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_C
–
Mounting Torque, M6 Main Terminal Screw
–
Weight (Typical)
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
CM1400DU-24NF
-40 to 150
-40 to 125
1200
±20
1400
2800*
1400
2800*
8920
40
40
1400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25 C°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
(Without Lead Resistance)
Module Lead Resistance
Total Gate Charge
Emitter-Collector Voltage**
V_GE(th)
V_CE(sat)
(Chip)
R_(lead)
Q_G
V_EC
I_C = 140mA, V_CE = 10V
I_C = 1400A, V_GE = 15V, T_j = 25°C
I_C = 1400A, V_GE = 15V, T_j = 125°C
I_C = 1400A, Terminal-chip
V_CC = 600V, I_C = 1400A, V_GE = 15V
I_E = 1400A, V_GE = 0V
Min.
Typ.
Max. Units
–
–
1
mA
–
–
0.5
µA
6
7
8
Volts
–
1.9
2.5
Volts
–
2.1
–
Volts
–
0.143 –
mΩ
–
7200
–
nC
–
–
3.4
Volts
Dynamic Electrical Characteristics, T_j = 25 C°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
C_ies
C_oes
C_res
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
–
V_CE = 10V, V_GE = 0V
–
–
V_CC = 600V,
–
I_C = 1400A, I_E = 1400A,
–
V_GE1 = V_GE2 = 15V,
–
R_G = 1.0⍀,
–
Inductive Load
–
Switching Operation
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
–
–
–
–
–
–
–
–
100
Max.
220
25
4.7
400
300
1000
300
800
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
2