CM1200HA-24J Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts

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CM1200HA-24J
Single IGBTMOD™ H-Series Module
1200 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
2400
V_GE = 20V
2000 _{Tj = 25°C}
15
12
11
1600
1200
10
800
9
400
8
0
0
2
4
6
8
10
V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 2400A
6
I_C = 1200A
4
2
0
0
10⁴
I_C = 480A
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
t_d(off)
t_f
t_d(on)
10²
10¹
10¹
t_r
V_CC = 600V
V_GE = ±15V
R_G = 3.3 Ω
T_j = 125°C
10²
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
2400
2000
1600
OUTPUT CHARACTERISTICS
(TYPICAL)
V_CE = 10V
T_j = 25°C
T_j = 125°C
1200
800
400
0
0
4
8
12 16 20
V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
T_j = 25°C
10³
10²
1.0 1.5 2.0 2.5 3.0 3.5
V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10³
t_rr
10²
I_rr
10²
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
10³
500 1000 1500 2000 2500
I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
C_ies
10²
C_oes
10¹
V_GE = 0V
C_res
10⁰
10^-1
10⁰
10¹
10²
V_CE, (VOLTS)
GATE CHARGE, V_GE
(TYPICAL)
20
I_C = 1200A
16
V_CC = 400V
V_CC = 600V
12
8
di/dt = -2400A/µsec
T_j = 25°C
10¹
10¹
10²
10³
I_E, (AMPERES)
10¹
10⁴
4
0
0
2000 4000 6000 8000
Q_G, (nC)
3