CM1200HA-24J Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM1200HA-24J
Single IGBTMOD™ H-Series Module
1200 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current** (T_c = 25°C)
Peak Emitter Current** (T_j ≤ 150°C)
Maximum Collector Dissipation (T_c = 25°C) (T_j < 150°C)
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Mounting Torque G(E) Terminal M4
Module Weight (Typical)
Isolation Voltage, Main Terminal to Base Plate, AC 1 Min.
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
–
–
–
V_iso
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter Current Voltage**
I_CES
I_GES
V_GE(th)
V_CE(sat)
Q_G
V_EC
V_CE = V_CES, V_GE = 0V
V_GE = V_CES, V_CE = 0V
I_C = 120mA, V_CE = 10V
I_C = 1200A, V_GE = 15V, T_j = 25°C
I_C = 1200A, V_GE = 15V, T_j = 125°C
V_CC = 600V, I_C = 1200A, V_GE = 15V
I_E = 1200A, V_GE = 0V
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
C_ies
C_oes
C_res
t_d(on)
V_GE = 0V, V_CE = 10V
V_CC = 600V, I_C = 1200A,
Load
Switching
Rise Time
Turn-off Delay Time
t_r
t_d(off)
V_GE1 = V_GE2 = 15V,
R_G = 3.3Ω, Resistive
Time
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
t_f
Load Switching Operation
t_rr
I_E = 1200A, di_E/dt = –2400A/µs
Q_rr
I_E = 1200A, di_E/dt = –2400A/µs
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case**
R_th(j-c)Q
Per IGBT
Thermal Resistance, Junction to Case**
R_th(j-c)R
Per FWDi
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
* Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
CM1200HA-24J
–40 to +150
–40 to +125
1200
±20
1200
2400*
1200
2400*
5800
95
40
15
1600
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Min.
Typ.
Max. Units
–
–
6
mA
–
–
0.5
µA
4.5
6.0
7.5
Volts
–
2.4
3.1
Volts
–
2.5
–
Volts
–
5000
–
nC
–
–
3.7
Volts
Min.
Typ.
Max. Units
–
–
200
nF
–
–
70
nF
–
–
40
nF
–
–
600
ns
–
–
1800
ns
–
–
1200
ns
–
–
1500
ns
–
–
300
ns
–
9.0
–
µC
Min.
Typ.
Max. Units
–
–
0.022 °C/W
–
–
0.050 °C/W
–
–
0.018 °C/W