GCU08AA-130 Datasheet, PDF (2/7 Pages) Powerex Power Semiconductors – GATE COMMUTATED TURN-OFF THYRISTOR UNIT HIGH POWER INVERTER USE

MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT
GCU08AA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
GCT PART (Type name : FGC800A-130DS)
MAXIMUM RATINGS
Symbol
VRRM
VRSM
VDRM
VDSM
VLTDS
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage
Conditions
—
—
VGK = –2V
VGK = –2V
VGK = –2V, λ = 100 Fit
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I^2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH, VRG = 20V
Tj = 25/115°C, With GU-D08
(see Fig. 1, 3)
Applied for all conduction angles
f = 60Hz, sinewave θ = 180°, Tf = 55°C
One half cycle at 60Hz, Tj = 115°C Start
VD = 3000V, IT = 800A, CS= 0.1µF, RS= 10Ω
Tj = 25/115°C, f = 60Hz, With GU-D08 (see Fig. 1,2 )
(Recommended value 13kN)
Typical value
Voltage class
6500
6500
6500
6500
3600
Ratings
800
520
330
4.8
9.6 × 10⁴
1000
10
21
500
800
5
17
100
120
–20 ~ +115
–20 ~ +150
11.1 ~ 15.8
530
Unit
V
V
V
V
V
Unit
A
A
A
kA
A²s
A/µs
V
V
A
A
kW
kW
W
W
°C
°C
kN
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
Eon
ts
Eoff
QRR
Erec
IGT
VGT
Rth(j-f)
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
Thermal resistance
IT = 800A, Tj = 115°C
VRM = 6500V, Tj = 115°C
VDM = 6500V, VGK = –2V, Tj = 115°C
VRG = 21V, Tj = 115°C
VD = 3000V, VGK = –2V, Tj = 115°C
(Expo. wave)
(see Fig. 4)
IT = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 115°C
CS= 0.1µF, RS = 10Ω
With GU-D08
(see Fig. 1, 2)
IT = 800A, VDM = 3/4 VDRM, VD = 3000V
CS= 0.1µF, RS= 10Ω, VRG = 20V, Tj = 115°C
With GU-D08
(see Fig. 1, 5)
VR = 3000V, IT = 800A, di/dt = 1000A/µs
CS= 0.1µF, RS = 10Ω, Tj = 115°C
(see Fig. 5, 6)
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
Min
—
—
—
—
3000
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
6.8
150
100
50
—
5.0
1.0
1.6
3.0
6.0
1650
5.0
0.5
1.5
0.025
Unit
V
mA
mA
mA
V/µs
µs
µs
J/P
µs
J/P
µC
J/P
A
V
°C/W
Mar. 2001