|
CM800DZ-34H Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE | |||
|
◁ |
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Item
Conditions
Ratings
Unit
VCES
VGES
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
VCE = 0V
1700
V
±20
V
IC
Collector current
ICM
TC = 25°C
Pulse
800
A
(Note 1)
1600
A
IE (Note 2) Emitter current
IEM (Note 2)
TC = 25°C
Pulse
800
A
(Note 1)
1600
A
PC (Note 3) Maximum collector dissipation TC = 25°C, IGBT part
5000
W
Tj
Junction temperature
â
â40 ~ +150
°C
Tstg
Storage temperature
â
â40 ~ +125
°C
Viso
Isolation voltage
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
4000
V
Main terminals screw M8
6.67 ~ 13.00
N·m
â
Mounting torque
Mounting screw M6
2.84 ~ 6.00
N·m
Auxiliary terminals screw M4
0.88 ~ 2.00
N·m
â
Mass
Typical value
1.0
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
â
Gate-emitter
VGE(th)
threshold voltage
IC = 80mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
â
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 800A, VGE = 15V
â
(Note 4)
â
Cies
Input capacitance
â
Coes
Output capacitance
VCE = 10V
â
Cres
Reverse transfer capacitance VGE = 0V
â
QG
Total gate charge
VCC = 850V, IC = 800A, VGE = 15V
â
td (on)
Turn-on delay time
VCC = 850V, IC = 800A
â
tr
Turn-on rise time
VGE1 = VGE2 = 15V
â
td (off)
Turn-off delay time
RG = 3.3â¦
â
tf
Turn-off fall time
Resistive load switching operation
â
VEC (Note 2) Emitter-collector voltage
IE = 800A, VGE = 0V
â
trr (Note 2) Reverse recovery time
IE = 800A
â
Qrr (Note 2) Reverse recovery charge
die / dt = â1600A / µs
â
Rth(j-c)Q
Junction to case, IGBT part (Per 1/2 module)
â
Rth(j-c)R Thermal resistance
Junction to case, FWDi part (Per 1/2 module)
â
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied (Per 1/2 module) â
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
â
Unit
Max
12 mA
5.5
6.5 V
â
0.5 µA
2.80 3.64
3.20
â
V
72
â
nF
9.0
â
nF
3.6
â
nF
6.6
â
µC
â
1.60 µs
â
2.00 µs
â
2.70 µs
â
0.80 µs
2.60 3.38 V
â
2.70 µs
150
â
µC
â
0.025 K/W
â
0.043 K/W
0.020
â
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Oct. 2002
|
▷ |