CM800DZ-34H Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800DZ-34H
q IC ................................................................... 800A
q VCES ....................................................... 1700V
q Insulated Type
q 2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
130
114
57±0.25
57±0.25
E1
C2
CM C1
E2
4 - M8 NUTS
E1
G1
C1
E1
C2
G2
E2
C1
E1
G1
C1
E2
C2
G2
6 - M4 NUTS
16
40
53
11.85
18
44
57
55.2
CIRCUIT DIAGRAM
6 - φ 7 MOUNTING HOLES
11.5
14
5
35
LABEL
Dimensions in mm
C2
E2
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Oct. 2002