CM600E2Y-34H Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Item
Conditions
Ratings
Unit
VCES
Collector-emitter voltage
VGE = 0V
1700
V
VGES
Gate-emitter voltage
VCE = 0V
±20
V
IC
Collector current
ICM
TC = 25°C
Pulse
600
A
(Note 1)
1200
A
IE (Note 2) _{Emitter current}
IEM (Note 2)
TC = 25°C
Pulse
600
A
(Note 1)
1200
A
PC (Note 3) Maximum collector dissipation TC = 25°C, IGBT part
6200
W
Tj
Junction temperature
—
–40 ~ +150
°C
Tstg
Storage temperature
—
–40 ~ +125
°C
Viso
Isolation voltage
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
4000
V
Main terminals screw M8
6.67 ~ 13.00
N·m
—
Mounting torque
Mounting screw M6
2.84 ~ 6.00
N·m
Auxiliary terminals screw M4
0.88 ~ 2.00
N·m
—
Mass
Typical value
1.5
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
Gate-emitter
VGE(th)
threshold voltage
IC = 60mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
—
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 600A, VGE = 15V
—
(Note 4)
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 850V, IC = 600A, VGE = 15V
—
td (on)
Turn-on delay time
VCC = 850V, IC = 600A
—
tr
Turn-on rise time
VGE1 = VGE2 = 15V
—
td (off)
Turn-off delay time
RG = 3.3Ω
—
tf
Turn-off fall time
Resistive load switching operation
—
VEC (Note 2) Emitter-collector voltage
IE = 600A, VGE = 0V
—
trr (Note 2) Reverse recovery time
IE = 600A
—
Qrr (Note 2) Reverse recovery charge
die / dt = –1200A / µs
—
Rth(j-c)Q
Junction to case, IGBT part
—
Rth(j-c)R ^{Thermal resistance}
Junction to case, FWDi part
—
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied (Per 1/2 module) —
VFM
Forward voltage
IF = 600A, Clamp diode part
—
trr
Reverse recovery time
IF = 600A
—
Qrr
Reverse recovery charge
dif / dt = –1200A / µs, Clamp diode part
—
Rth(j-c)
Thermal resistance
Junction to case, Clamp diode part
—
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied (Per 1/2 module) _—
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
—
Unit
Max
12 mA
5.5
6.5 V
—
0.5 µA
2.75 3.58
3.30
—
V
70
—
nF
10.0
—
nF
3.8
—
nF
3.3
—
µC
—
1.20 µs
—
1.50 µs
—
2.00 µs
—
0.60 µs
2.40 3.12 V
—
2.00 µs
100
—
µC
—
0.020 K/W
—
0.064 K/W
0.016
—
K/W
2.50 3.25 V
—
2.00 _µs
100
—
µC
—
0.064 K/W
0.016
—
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000