CM600E2Y-34H Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM600E2Y-34H
q IC ................................................................... 600A
q VCES ....................................................... 1700V
q Insulated Type
q 1-elements in a pack (for brake)
APPLICATION
DC choppers, Dynamic braking choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57±0.25
57±0.25
E1
C2
CM C1
E2
4 - M8 NUTS
E1
G1
C1
E1
C2
C1
E2
E1
G1
C1
C2
3 - M4 NUTS
16
40
53
55.2
11.85
E2
G2
CIRCUIT DIAGRAM
6 - φ 7 MOUNTING HOLES
11.5
14
5
35
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000