CM450HA-5F Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM450HA-5F
Trench Gate Design Single IGBTMOD™
450 Amperes/250 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Maximum Mounting Torque, M6 Terminal Screws
Maximum Mounting Torque, M6 Mounting Screws
Maximum Mounting Torque, M4 (G, E) Terminal Screws
Module Weight (Typical)
V Isolation Voltage
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_FM
I_FM
P_d
—
—
—
—
V_RMS
CM450HA-5F
-40 to 150
-40 to 125
250
±20
450
900*
450
900*
735
26
26
13
270
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 45mA, V_CE = 10V
Collector-Emitter Saturation Voltage
Total Gate Charge
V_CE(sat)
Q_G
I_C = 450A, V_GE = 10V,
I_C = 450A, V_GE = 10V, T_j = 150°C
V_CC = 50V, I_C = 450A, V_GS = 15V
Diode Forward Voltage
V_FM
I_E = 450A, V_GS = 0V
Min.
Typ. Max. Units
—
—
1.0
mA
—
—
0.5
µA
3.0
4.0
5.0
Volts
—
1.2
1.7
Volts
—
1.1
—
Volts
—
1760
—
nC
—
—
2.0
Volts
Dynamic Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_IES
Output Capacitance
C_OES
V_GE = 0V, V_CE = 10V
Reverse Transfer Capacitance
C_RES
Resistive
Turn-on Delay Time
t_d(on)
Load
Switching
Times
Rise Time
Turn-off Delay Time
Fall Time
t_r
t_d(off)
t_F
V_CC = 50V, I_C = 450A,
V_GE1 = V_GE2 = 10V, R_G = 5.6Ω,
Resistive Load
Diode Reverse Recovery Time
t_rr
I_E = 450A, di_E/dt = -900A/ms
Diode Reverse Recovery Charge
Q_rr
I_E = 450A, di_E/dt = -900A/ms
Min.
Typ. Max. Units
—
—
132
nF
—
—
6
nF
—
—
4.5
nF
—
—
1200
ns
—
—
2700
ns
—
—
900
ns
—
—
500
ns
—
—
300
ns
—
7.6
—
µC
Thermal and Mechanical Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Thermal Resistance, Junction to Case
R_th(j-c)
Per IGBT
—
—
Thermal Resistance, Junction to Case
R_th(j-c)
Per Free Wheel Diode
—
—
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
—
—
Max.
0.17
0.23
0.090
Units
°C/W
°C/W
°C/W
366