CM450HA-5F Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM450HA-5F
Trench Gate Design
Single IGBTMOD™
450 Amperes/250 Volts
S
R
R
A
B
E
D
C
E
EC
G
Q - THD.
(2 TYP.)
GF
P - THD.
H
(2 TYP.)
N - DIA.
M
J
(2 TYP.)
K
LABEL
L
E
C
E
G
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
3.82
97.0
B
3.15
80.0
C
0.69
17.5
D
1.14
29.0
E
1.04
26.5
F
1.89
48.0
G
0.63
16.0
H
0.24
6.0
J
0.26
6.7
Dimensions
K
L
M
N
P
Q
R
S
Inches
1.14
1.42
0.28
0.26
M4 Metric
M5 Metric
0.51
0.35
Millimeters
29.0
36.0
7.0
6.5
M4
M5
13.0
9.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration, with a reverse
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□ Low Drive Power
□ Low V_CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diodes
□ High Frequency Operation
(20-25 kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ DC Chopper
□ UPS
□ Forklift
Ordering Information:
Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM450HA-5F is a 250V (V_CES),
450 Ampere Single IGBTMOD™
Power Module.
Current Rating
V_CES
Type
Amperes
Volts (x 50)
CM
450
5
365