CM300DX1-24NFJ Datasheet, PDF (2/6 Pages) Powerex Power Semiconductors – Dual IGBTMOD NX-Series Module 300 Amperes/1200 Volts

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CM300DX1-24NFJ
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (G-E Short-circuited)
Gate-Emitter Voltage (C-E Short-circuited)
Collector Current (Operation)^*4
Collector Current (Pulse)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current (Operation)^*4
Emitter Current (Pulse)^*3
Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_f) measured point is just under the chips.
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
16.2
29.8
Di2 Tr2
47
Di2 Tr2
48
24
Di1 Di1
Tr1 Tr1
23
27.2
38.9
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
T_j
T_stg
V_ISO
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
LABEL SIDE
92.8 80.5
42.1 28.6
0
Each mark points to the center position of each chip.
Tr1 / Tr2: IGBT
Di1 / Di2: FWDi
*3 Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
*4 Junction temperature (T_j) should not increase beyond maximum junction temperature (T_j(max)) rating.
Rating
1200
±20
300
600
1890
300
600
-40 to 150
-40 to 125
2500
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
°C
°C
V_rms
2
07/11 Rev. 0